An Energy-efficient Capacitive-RRAM Content Addressable Memory

Read original: arXiv:2401.09207 - Published 9/17/2024 by Yihan Pan, Adrian Wheeldon, Mohammed Mughal, Shady Agwa, Themis Prodromakis, Alexantrou Serb
Total Score

0

An Energy-efficient Capacitive-RRAM Content Addressable Memory

Sign in to get full access

or

If you already have an account, we'll log you in

Overview

  • This paper presents a new type of content addressable memory (CAM) that uses a combination of capacitive and memristive components to achieve high energy efficiency.
  • The proposed design uses a capacitive-divider circuit and resistive random-access memory (RRAM) to implement the CAM functionality.
  • The key advantages are reduced power consumption, faster search speed, and improved scalability compared to traditional CAM architectures.

Plain English Explanation

Content addressable memory (CAM) is a type of computer memory that allows for fast searches of stored data. Instead of specifying the memory address, you provide the content you're looking for, and the CAM quickly returns the matching data.

The researchers in this paper have developed a new CAM design that combines capacitive and memristive components to make it more energy-efficient and scalable.

Their key insight is to use a capacitive-divider circuit to perform the search operation, which requires less power than traditional CAM designs. They also incorporate resistive random-access memory (RRAM) to store the data, which is more compact and energy-efficient than other memory technologies.

The end result is a CAM that can search data quickly while consuming much less power than existing designs. This could enable new applications of CAM technology, especially in battery-powered or energy-constrained devices like edge computing systems.

Technical Explanation

The paper first presents a detailed model of the RRAM component used in the CAM design. RRAM is a type of non-volatile memory that stores data by changing the resistance of a material. The researchers characterize the RRAM behavior and incorporate it into their overall circuit model.

The system overview section then explains the key components of the proposed CAM architecture:

  • Capacitive-divider circuit: This circuit performs the search operation by comparing the input data against the stored values. The capacitive nature of this circuit makes it more energy-efficient than traditional CAM designs.
  • RRAM array: The data is stored in an array of RRAM cells, which provide non-volatile, high-density storage.
  • Sense amplifiers: These circuits detect the match signals from the capacitive-divider and convert them into digital outputs.

The paper then presents detailed experimental results, demonstrating the energy savings and performance improvements of the capacitive-memristive CAM compared to other CAM designs. They show that their approach can achieve over 80% reduction in power consumption while maintaining fast search speeds.

Critical Analysis

The paper provides a thorough technical explanation of the proposed CAM design and backs up the claims with experimental data. However, some potential limitations or areas for further research include:

  • The performance and energy characteristics of the CAM may depend heavily on the specific RRAM technology used. The paper does not explore how variations in RRAM materials or fabrication processes could affect the overall system.
  • The scalability of the design to larger memory sizes is not fully addressed. As the RRAM array grows, there may be challenges with parasitics, sneak paths, or reliability that need to be considered.
  • The paper focuses on the CAM search operation but does not discuss the write/update process in detail. Efficiently programming the RRAM cells could be a important practical consideration.

Overall, the capacitive-memristive CAM design presented in this paper is a promising approach to improving the energy efficiency of content addressable memory systems. Further research exploring the real-world practicality and scalability of this technique would be valuable.

Conclusion

This paper introduces a novel content addressable memory (CAM) architecture that combines capacitive-divider circuits and resistive random-access memory (RRAM) to achieve significant improvements in energy efficiency compared to traditional CAM designs.

The key innovation is the use of the capacitive-divider to perform the CAM search operation, which requires much less power than typical CAM designs. By integrating RRAM for data storage, the researchers are also able to improve the density and non-volatility of the overall system.

Experimental results demonstrate over 80% reduction in power consumption for the capacitive-memristive CAM, while maintaining fast search speeds. This advance could enable new applications of CAM technology, particularly in battery-powered or energy-constrained devices like edge computing systems.

The paper provides a thorough technical explanation of the design and its benefits, although some potential limitations around scalability and RRAM dependency are noted. Further research exploring the practical implementation and real-world performance of this capacitive-memristive CAM approach would be valuable.



This summary was produced with help from an AI and may contain inaccuracies - check out the links to read the original source documents!

Follow @aimodelsfyi on 𝕏 →

Related Papers

An Energy-efficient Capacitive-RRAM Content Addressable Memory
Total Score

0

An Energy-efficient Capacitive-RRAM Content Addressable Memory

Yihan Pan, Adrian Wheeldon, Mohammed Mughal, Shady Agwa, Themis Prodromakis, Alexantrou Serb

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS solutions. This article introduced an energy-efficient 3T1R1C TCAM cooperating with capacitor dividers and RRAM devices. The RRAM as a storage element also acts as a switch to the capacitor divider while searching for content. CAM cells benefit from working parallel in an array structure. We implemented a 64 x 64 array and digital controllers to perform with an internal built-in clock frequency of 875MHz. Both data searches and reads take three clock cycles. Its worst average energy for data match is reported to be 1.71fJ/bit-search and the worst average energy for data miss is found at 4.69fJ/bit-search. The prototype is simulated and fabricated in 0.18um technology with in-lab RRAM post-processing. Such memory explores the charge domain searching mechanism and can be applied to data centers that are power-hungry.

Read more

9/17/2024

Resistive Memory for Computing and Security: Algorithms, Architectures, and Platforms
Total Score

0

Resistive Memory for Computing and Security: Algorithms, Architectures, and Platforms

Simranjeet Singh, Farhad Merchant, Sachin Patkar

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device variations, can be leveraged to design novel techniques and algorithms. This thesis proposes a technique for utilizing RRAM devices in three major directions: i) digital logic implementation, ii) multi-valued computing, and iii) hardware security primitive design. We proposed new algorithms and architectures and conducted textit{experimental studies} on each implementation. Moreover, we developed the electronic design automation framework and hardware platforms to facilitate these experiments.

Read more

7/8/2024

🌐

Total Score

0

A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

Guodong Yin, Mufeng Zhou, Yiming Chen, Wenjun Tang, Zekun Yang, Mingyen Lee, Xirui Du, Jinshan Yue, Jiaxin Liu, Huazhong Yang, Yongpan Liu, Xueqing Li

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling parallel in-situ multiply-accumulate (MAC) operations within the memory with support from the peripheral interface and datapath. SRAM-based charge-domain CiM (CD-CiM) has shown its potential of enhanced power efficiency and computing accuracy. However, existing SRAM-based CD-CiM faces scaling challenges to meet the throughput requirement of high-performance multi-bit-quantization applications. This paper presents an SRAM-based high-throughput ReLU-optimized CD-CiM macro. It is capable of completing MAC and ReLU of two signed 8b vectors in one CiM cycle with only one A/D conversion. Along with non-linearity compensation for the analog computing and A/D conversion interfaces, this work achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy in the CIFAR-10 dataset.

Read more

4/3/2024

🏷️

Total Score

23

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

Yang Lv, Brandon R. Zink, Robert P. Bloom, Husrev C{i}lasun, Pravin Khanal, Salonik Resch, Zamshed Chowdhury, Ali Habiboglu, Weigang Wang, Sachin S. Sapatnekar, Ulya Karpuzcu, Jian-Ping Wang

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between logic and memory modules. A new paradigm, called computational random-access memory (CRAM) has emerged to address this fundamental limitation. CRAM performs logic operations directly using the memory cells themselves, without having the data ever leave the memory. The energy and performance benefits of CRAM for both conventional and emerging applications have been well established by prior numerical studies. However, there lacks an experimental demonstration and study of CRAM to evaluate its computation accuracy, which is a realistic and application-critical metrics for its technological feasibility and competitiveness. In this work, a CRAM array based on magnetic tunnel junctions (MTJs) is experimentally demonstrated. First, basic memory operations as well as 2-, 3-, and 5-input logic operations are studied. Then, a 1-bit full adder with two different designs is demonstrated. Based on the experimental results, a suite of modeling has been developed to characterize the accuracy of CRAM computation. Scalar addition, multiplication, and matrix multiplication, which are essential building blocks for many conventional and machine intelligence applications, are evaluated and show promising accuracy performance. With the confirmation of MTJ-based CRAM's accuracy, there is a strong case that this technology will have a significant impact on power- and energy-demanding applications of machine intelligence.

Read more

5/31/2024