Stochastic models of memristive behavior

Read original: arXiv:2312.15212 - Published 8/1/2024 by P. F. Gora, Ewa Gudowska-Nowak
Total Score

0

Stochastic models of memristive behavior

Sign in to get full access

or

If you already have an account, we'll log you in

Overview

  • Examines stochastic models of memristive behavior, a type of adaptive electronic device
  • Explores two specific models: a time-delay model and an asymmetric double-well model
  • Investigates the impact of correlated noise on a harmonic well model
  • Provides insight into the complex dynamics and potential applications of memristive systems

Plain English Explanation

Memristors are a type of electronic component that can "remember" past voltages or currents and adjust their behavior accordingly. This gives them the ability to adapt and change over time, much like the human brain. The paper explores different mathematical models to better understand the stochastic, or random, behaviors that can arise in memristive systems.

The first model looks at how introducing a time delay in the memristor's response can lead to complex, unpredictable dynamics. The second model considers an asymmetric "double-well" potential, which creates a bistable system that can switch between two stable states.

Finally, the paper examines how the introduction of correlated noise, where random fluctuations are linked together, can impact a harmonic well model of a memristor. This helps reveal the rich and intricate behaviors that can emerge in these adaptive electronic devices.

Understanding these stochastic models is important for developing reliable and predictable memristor-based technologies, such as neuromorphic computing and time series forecasting. The findings could also shed light on the complex dynamics observed in biological neural networks.

Technical Explanation

A time-delay model

The paper first explores a time-delay model of memristive behavior, where the device's response is influenced by its past state. This time-delayed feedback can lead to complex, aperiodic oscillations and bistable switching behaviors. The researchers use dynamical systems theory to analyze the stability and bifurcation points of this model, revealing the rich variety of dynamics that can arise.

An asymmetric double-well

Next, the researchers consider an asymmetric double-well potential model, where the memristor can exist in one of two stable states. This bistable system exhibits switching between the two states, driven by noise. The authors analyze the switching rates and residence times in this model, providing insight into the stochastic nature of memristive devices.

Harmonic well with correlated noises

Finally, the paper investigates the impact of correlated noise on a harmonic well model of a memristor. Correlated noise, where random fluctuations are linked together, can significantly alter the device's dynamics compared to uncorrelated noise. The researchers explore how the strength and nature of the correlations influence the system's behavior, shedding light on the complex interplay between noise and memristive dynamics.

Critical Analysis

The paper provides a thorough theoretical exploration of several stochastic models of memristive behavior, highlighting the rich complexity that can arise in these adaptive electronic devices. The authors demonstrate a deep understanding of the underlying dynamical systems and their mathematical analysis.

One potential limitation is the lack of experimental validation or comparison to real-world memristive devices. While the models are well-grounded in theory, it would be valuable to see how well they capture the observed behaviors of physical memristors. Incorporating more empirical data could strengthen the connection between the theoretical insights and practical applications.

Additionally, the paper focuses primarily on the intrinsic dynamics of memristors, without delving into their potential use cases or system-level implications. Exploring how these stochastic models might impact the design and performance of memristor-based neuromorphic computing or time series forecasting systems could further enhance the practical relevance of the findings.

Conclusion

This paper offers a comprehensive theoretical examination of stochastic models of memristive behavior, shedding light on the complex dynamics that can emerge in these adaptive electronic devices. The researchers' exploration of time-delay, asymmetric double-well, and correlated noise models provides valuable insights into the rich behaviors that can arise in memristive systems.

These findings have important implications for the development of reliable and predictable memristor-based technologies, such as neuromorphic computing and time series forecasting. The insights gained could also inform our understanding of the complex dynamics observed in biological neural networks. Further experimental validation and system-level analysis could strengthen the practical relevance of this work and pave the way for more advanced memristor-based applications.



This summary was produced with help from an AI and may contain inaccuracies - check out the links to read the original source documents!

Follow @aimodelsfyi on 𝕏 →

Related Papers

Stochastic models of memristive behavior
Total Score

0

Stochastic models of memristive behavior

P. F. Gora, Ewa Gudowska-Nowak

Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks of information transduction and transformation, where intrinsic random behavior can be harnessed for high performance of circuits built up of individual memory storing elements. The paper discusses models of single memristive devices exhibiting both - dynamic hysteresis and Stochastic Resonance, addressing also the cooperative effect of correlated noises acting on the system and occurrence of dirty hysteretic rounding.

Read more

8/1/2024

Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing
Total Score

0

Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing

Waleed El-Geresy, Christos Papavassiliou, Deniz Gunduz

In this paper, we build a general model of memristors suitable for the simulation of event-based systems, such as hardware spiking neural networks, and more generally, neuromorphic computing systems. We extend an existing general model of memristors - the Generalised Metastable Switch Model - to an event-driven setting, eliminating errors associated discrete time approximation, as well as offering potential improvements in terms of computational efficiency for simulation. We introduce the notion of a volatility state variable, to allow for the modelling of memory-dependent and dynamic switching behaviour, succinctly capturing and unifying a variety of volatile phenomena present in memristive devices, including state relaxation, structural disruption, Joule heating, and drift acceleration phenomena. We supply a drift dataset for titanium dioxide memristors and introduce a linear conductance model to simulate the drift characteristics, motivated by a proposed physical model of filament growth. We then demonstrate an approach for fitting the parameters of the event-based model to the drift model.

Read more

7/24/2024

Delay Conditioned Generative Modelling of Resistive Drift in Memristors
Total Score

0

Delay Conditioned Generative Modelling of Resistive Drift in Memristors

Waleed El-Geresy, Christos Papavassiliou, Deniz Gunduz

The modelling of memristive devices is an essential part of the development of novel in-memory computing systems. Models are needed to enable the accurate and efficient simulation of memristor device characteristics, for purposes of testing the performance of the devices or the feasibility of their use in future neuromorphic and in-memory computing architectures. The consideration of memristor non-idealities is an essential part of any modelling approach. The nature of the deviation of memristive devices from their initial state, particularly at ambient temperature and in the absence of a stimulating voltage, is of key interest, as it dictates their reliability as information storage media - a property that is of importance for both traditional storage and neuromorphic applications. In this paper, we investigate the use of a generative modelling approach for the simulation of the delay and initial resistance-conditioned resistive drift distribution of memristive devices. We introduce a data normalisation scheme and a novel training technique to enable the generative model to be conditioned on the continuous inputs. The proposed generative modelling approach is suited for use in end-to-end training and device modelling scenarios, including learned data storage applications, due to its simulation efficiency and differentiability.

Read more

8/6/2024

🔍

Total Score

0

Building time-surfaces by exploiting the complex volatility of an ECRAM memristor

Marco Rasetto, Qingzhou Wan, Himanshu Akolkar, Feng Xiong, Bertram Shi, Ryad Benosman

Memristors have emerged as a promising technology for efficient neuromorphic architectures owing to their ability to act as programmable synapses, combining processing and memory into a single device. Although they are most commonly used for static encoding of synaptic weights, recent work has begun to investigate the use of their dynamical properties, such as Short Term Plasticity (STP), to integrate events over time in event-based architectures. However, we are still far from completely understanding the range of possible behaviors and how they might be exploited in neuromorphic computation. This work focuses on a newly developed Li$_textbf{x}$WO$_textbf{3}$-based three-terminal memristor that exhibits tunable STP and a conductance response modeled by a double exponential decay. We derive a stochastic model of the device from experimental data and investigate how device stochasticity, STP, and the double exponential decay affect accuracy in a hierarchy of time-surfaces (HOTS) architecture. We found that the device's stochasticity does not affect accuracy, that STP can reduce the effect of salt and pepper noise in signals from event-based sensors, and that the double exponential decay improves accuracy by integrating temporal information over multiple time scales. Our approach can be generalized to study other memristive devices to build a better understanding of how control over temporal dynamics can enable neuromorphic engineers to fine-tune devices and architectures to fit their problems at hand.

Read more

4/16/2024