Superconductor bistable vortex memory for data storage and in-memory computing

Read original: arXiv:2406.08871 - Published 6/14/2024 by Mustafa Altay Karamuftuoglu, Beyza Zeynep Ucpinar, Sasan Razmkhah, Massoud Pedram
Total Score

0

Superconductor bistable vortex memory for data storage and in-memory computing

Sign in to get full access

or

If you already have an account, we'll log you in

Overview

  • Explores a new type of superconductor-based memory technology called "vortex memory"
  • Demonstrates how vortex memory can be used for data storage and in-memory computing
  • Presents a crossbar memory array architecture that leverages the bistable nature of vortex states

Plain English Explanation

Superconductors are materials that can conduct electricity without any resistance, and they have some unique properties that can be useful for building new types of memory and computing devices. This paper looks at a special kind of superconductor memory called "vortex memory," where information is stored in the form of magnetic vortices, or swirls, within the superconductor.

The key advantage of vortex memory is that it can exist in two stable states, much like the 0s and 1s used in traditional digital memory. This bistable nature makes vortex memory well-suited for data storage. Additionally, the authors show how vortex memory can be used for a type of computing called "in-memory computing," where the memory itself can perform calculations, potentially improving the speed and efficiency of certain computing tasks.

The paper presents a specific architecture for a vortex memory crossbar array, which is a grid-like structure that allows for the parallel reading and writing of data. This crossbar design could enable high-density, high-performance memory and computing systems based on vortex memory technology.

Technical Explanation

The paper explores the use of superconductor-based "vortex memory" for data storage and in-memory computing. Vortex memory takes advantage of the fact that magnetic vortices, or swirls of supercurrent, can exist in two stable states within a superconductor. These bistable vortex states can be used to represent the 0s and 1s of digital information, much like the magnetic domains in conventional hard disk drives.

The authors demonstrate a crossbar memory array architecture that leverages the bistable nature of vortex states. In this design, rows and columns of superconducting nanowires are arranged in a grid, with Josephson junctions at the intersections. The state of the vortex at each junction can be detected and manipulated, enabling parallel reading and writing of data. This crossbar structure could enable high-density, high-performance memory and computing systems based on vortex memory technology.

The researchers also show how the vortex memory can be used for in-memory computing, where the memory itself performs certain computational operations. This could improve the speed and efficiency of certain tasks by reducing the need to continuously move data between separate memory and processing units.

Critical Analysis

The paper presents a compelling concept for a new type of superconductor-based memory and computing technology. The vortex memory approach is interesting, as it leverages the unique properties of superconductors to achieve bistable states that can be used for data storage and in-memory computing.

One potential limitation of the vortex memory technology is the need for cryogenic operating temperatures, as superconductors typically require cooling to very low temperatures to function. This could limit the practical applications and scalability of the technology compared to room-temperature alternatives, such as spintronic memristors or magnetic tunnel junction-based computing.

Additionally, the paper does not provide a detailed analysis of the energy efficiency, read/write performance, or data retention characteristics of the vortex memory system. Further research and experimentation would be needed to fully evaluate the practical viability of this technology compared to other emerging memory and computing approaches, such as non-linear memristors, ferroelectrically enhanced Schottky barrier transistors, or event-based neuromorphic computing.

Conclusion

This paper presents an intriguing concept for a new type of superconductor-based memory and computing technology called "vortex memory." The key advantages of vortex memory are its bistable nature, which enables data storage, and its potential for in-memory computing, which could improve the speed and efficiency of certain computing tasks.

The crossbar memory array architecture described in the paper offers a promising path for implementing high-density, high-performance vortex memory systems. However, the practical viability of this technology remains to be fully explored, particularly in terms of addressing the challenges of cryogenic operation and demonstrating competitive performance and energy efficiency metrics.

Overall, the vortex memory concept is an interesting contribution to the ongoing research into alternative memory and computing technologies that could complement or even replace conventional silicon-based electronics in the future.



This summary was produced with help from an AI and may contain inaccuracies - check out the links to read the original source documents!

Follow @aimodelsfyi on 𝕏 →

Related Papers

Superconductor bistable vortex memory for data storage and in-memory computing
Total Score

0

Superconductor bistable vortex memory for data storage and in-memory computing

Mustafa Altay Karamuftuoglu, Beyza Zeynep Ucpinar, Sasan Razmkhah, Massoud Pedram

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable nonvolatile memory designs. While various nonvolatile memory technologies, including Non-destructive readout, vortex transitional memory (VTM), and magnetic memory, have been explored, achieving a superconductor random-access memory (RAM) crossbar array remains challenging. This paper introduces a novel, nonvolatile, high-density, and scalable VTM cell design for SCE applications. Our proposed design addresses scaling issues while boasting zero static power consumption characteristics. Our design leverages current summation, enabling analog multiply-accumulate operations -an essential feature for many in-memory computational tasks. We demonstrate the efficacy of our approach with a 32 x 32 superconductor memory array operating at 20 GHz. This design effectively addresses scaling issues and utilizes current summation that can be used for analog multiply-accumulate operations. Additionally, we showcase the accumulation property of the memory through analog simulations conducted on an 8 x 8 superconductor crossbar array.

Read more

6/14/2024

💬

Total Score

0

Spintronic memristors for computing

Qiming Shao, Zhongrui Wang, Yan Zhou, Shunsuke Fukami, Damien Querlioz, Yiran Chen, Leon O. Chua

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications.

Read more

4/23/2024

🎯

Total Score

0

Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays- Part 2: Design Knobs and DNN Accuracy Trends

Jeffry Victor, Chunguang Wang, Sumeet K. Gupta

Crossbar memory arrays have been touted as the workhorse of in-memory computing (IMC)-based acceleration of Deep Neural Networks (DNNs), but the associated hardware non-idealities limit their efficacy. To address this, cross-layer design solutions that reduce the impact of hardware non-idealities on DNN accuracy are needed. In Part 1 of this paper, we established the co-optimization strategies for various memory technologies and their crossbar arrays, and conducted a comparative technology evaluation in the context of IMC robustness. In this part, we analyze various design knobs such as array size and bit-slice (number of bits per device) and their impact on the performance of 8T SRAM, ferroelectric transistor (FeFET), Resistive RAM (ReRAM) and spin-orbit-torque magnetic RAM (SOT-MRAM) in the context of inference accuracy at 7nm technology node. Further, we study the effect of circuit design solutions such as Partial Wordline Activation (PWA) and custom ADC reference levels that reduce the hardware non-idealities and comparatively analyze the response of each technology to such accuracy enhancing techniques. Our results on ResNet-20 (with CIFAR-10) show that PWA increases accuracy by up to 32.56% while custom ADC reference levels yield up to 31.62% accuracy enhancement. We observe that compared to the other technologies, FeFET, by virtue of its small layout height and high distinguishability of its memory states, is best suited for large arrays. For higher bit-slices and a more complex dataset (ResNet-50 with Cifar-100) we found that ReRAM matches the performance of FeFET.

Read more

8/13/2024

📊

Total Score

0

Prospects for non-linear memristors as so-far missing core hardware element for transferless data computing and storage

Heidemarie Schmidt

We like and need Information and Communications Technologies (ICT) for data processing. This is measureable in the exponential growth of data processed by ICT, e.g. ICT for cryptocurrency mining and search engines. So far, the energy demand for computing technology has increased by a factor of 1.38 every ten years due to the exponentially increasing use of ICT systems as computing devices. The energy consumption of ICT systems is expected to rise from 1500 TWh (8% of global electricity consumption) in 2010 to 5700 TWh (14% of global electricity consumption) in 2030. A large part of this energy is required for the continuous data transfer between the separated memory and processor units which constitute the main components of ICT computing devices in von-Neumann architecture. This at the same time massively slows down the computing power of ICT systems in the von-Neumann architecture. In addition, due to the increasing complexity of AI compute algorithms, since 2010 the AI training compute time demand for computing technology increases tenfold every year, for example in the period from 2010 to 2020 from 1x10^{-6} to 1x10^{+4} Petaflops/Day. It has been theoretically predicted that ICT systems in the neuromorphic computer architecture will circumvent all of this through the use of merged memory and processor units. However, the core hardware element for this has not yet been realized so far. In this work we discuss the prespectives for non-linear resistive switches as the core hardware element for merged memory and processor units in neuromorphic computers.

Read more

4/1/2024