Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model
0
Sign in to get full access
Overview
- This paper presents a physics-based compact model for analyzing the nonlinear dynamics and stability of locally-active Mott memristors.
- Mott memristors are a type of spintronic memristor that can exhibit complex, chaotic behavior.
- The model developed in this paper allows for a deeper understanding of the behavior of these devices and their potential applications in time-series forecasting and neuromorphic computing.
Plain English Explanation
The paper focuses on a type of memory device called a Mott memristor, which can exhibit complex, unpredictable behavior. Memristors are an emerging technology that can be used to build neuromorphic computing systems that mimic the way the human brain works.
The researchers developed a mathematical model that can accurately describe the behavior of these Mott memristors. This allows them to better understand how these devices work and explore their potential applications, such as in time-series forecasting and low-power, highly uniform digital circuits.
Technical Explanation
The paper presents a physics-based compact model for a one-dimensional locally-active Mott memristor. The model incorporates the complex electron dynamics in the Mott insulator material that gives rise to the memristive behavior.
The model is used to analyze the nonlinear dynamics and stability of the Mott memristor, revealing a range of complex behaviors including chaos, bistability, and hysteresis. These findings are supported by numerical simulations and compared to experimental data.
The model also provides insights into the internal mechanisms driving the memristive behavior, such as the interplay between electronic and ionic transport processes. This understanding can inform the design of memcapacitive bio-membranes and other memristive devices.
Critical Analysis
The paper provides a thorough and well-designed model for understanding the complex behavior of Mott memristors. The validation against experimental data lends credibility to the model's accuracy.
However, the model is limited to a one-dimensional case, and the authors note that extending it to higher dimensions would be an important next step. Additionally, the impacts of noise, variability, and non-ideal effects on the device stability and performance are not fully explored.
Further research is needed to understand how these factors might affect the practical implementation and reliability of Mott memristors in real-world applications. Nonetheless, this work represents an important contribution to the understanding and development of this promising memristive technology.
Conclusion
This paper presents a sophisticated physics-based model for analyzing the complex nonlinear dynamics and stability of locally-active Mott memristors. The model provides valuable insights into the underlying mechanisms driving the memristive behavior of these devices.
The findings have implications for the design and optimization of Mott memristors for applications in neuromorphic computing, time-series forecasting, and low-power digital circuits. Further research is needed to address the model's limitations and explore the practical challenges of implementing Mott memristors in real-world systems.
This summary was produced with help from an AI and may contain inaccuracies - check out the links to read the original source documents!
Related Papers
0
Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model
Wei Yi
Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization analyses and applied Chua's local activity theory to a one-dimensional locally-active vanadium dioxide Mott memristor based on an insulator-to-metal phase transition. This approach allows a connection between the dynamical behaviors of a Mott memristor and its physical device parameters as well as a complete mapping of the locally passive and edge of chaos domains in the frequency and current operating parameter space, which could guide materials and device development for neuromorphic circuit applications. We also examined the applicability of local analyses on a second-order relaxation oscillator circuit that consists of a voltage-biased vanadium dioxide memristor coupled to a parallel reactive capacitor element and a series resistor. We show that global nonlinear techniques, including nullclines and phase portraits, provide insights on instabilities and persistent oscillations near non-hyperbolic fixed points, such as a supercritical Hopf-like bifurcation from an unstable spiral to a stable limit cycle, with each of the three circuit parameters acting as a bifurcation parameter. The abruptive growth in the limit cycle resembles the Canard explosion phenomenon in systems exhibiting relaxation oscillations. Finally, we show that experimental limit cycle oscillations in a vanadium dioxide nano-device relaxation oscillator match well with SPICE simulations built upon the compact model.
Read more6/27/2024
0
Stochastic models of memristive behavior
P. F. Gora, Ewa Gudowska-Nowak
Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks of information transduction and transformation, where intrinsic random behavior can be harnessed for high performance of circuits built up of individual memory storing elements. The paper discusses models of single memristive devices exhibiting both - dynamic hysteresis and Stochastic Resonance, addressing also the cooperative effect of correlated noises acting on the system and occurrence of dirty hysteretic rounding.
Read more8/1/2024
0
Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing
Waleed El-Geresy, Christos Papavassiliou, Deniz Gunduz
In this paper, we build a general model of memristors suitable for the simulation of event-based systems, such as hardware spiking neural networks, and more generally, neuromorphic computing systems. We extend an existing general model of memristors - the Generalised Metastable Switch Model - to an event-driven setting, eliminating errors associated discrete time approximation, as well as offering potential improvements in terms of computational efficiency for simulation. We introduce the notion of a volatility state variable, to allow for the modelling of memory-dependent and dynamic switching behaviour, succinctly capturing and unifying a variety of volatile phenomena present in memristive devices, including state relaxation, structural disruption, Joule heating, and drift acceleration phenomena. We supply a drift dataset for titanium dioxide memristors and introduce a linear conductance model to simulate the drift characteristics, motivated by a proposed physical model of filament growth. We then demonstrate an approach for fitting the parameters of the event-based model to the drift model.
Read more7/24/2024
0
Employing Vector Field Techniques on the Analysis of Memristor Cellular Nonlinear Networks Cell Dynamics
Chandan Singh, Vasileios Ntinas, Dimitrios Prousalis, Yongmin Wang, Ahmet Samil Demirkol, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff
This paper introduces an innovative graphical analysis tool for investigating the dynamics of Memristor Cellular Nonlinear Networks (M-CNNs) featuring 2nd-order processing elements, known as M-CNN cells. In the era of specialized hardware catering to the demands of intelligent autonomous systems, the integration of memristors within Cellular Nonlinear Networks (CNNs) has emerged as a promising paradigm due to their exceptional characteristics. However, the standard Dynamic Route Map (DRM) analysis, applicable to 1st-order systems, fails to address the intricacies of 2nd-order M-CNN cell dynamics, as well the 2nd-order DRM (DRM2) exhibits limitations on the graphical illustration of local dynamical properties of the M-CNN cells, e.g. state derivative's magnitude. To address this limitation, we propose a novel integration of M-CNN cell vector field into the cell's phase portrait, enhancing the analysis efficacy and enabling efficient M-CNN cell design. A comprehensive exploration of M-CNN cell dynamics is presented, showcasing the utility of the proposed graphical tool for various scenarios, including bistable and monostable behavior, and demonstrating its superior ability to reveal subtle variations in cell behavior. Through this work, we offer a refined perspective on the analysis and design of M-CNNs, paving the way for advanced applications in edge computing and specialized hardware.
Read more8/7/2024